HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C.

Taku Umebayashi Yusuke Shuto Jun Okuno Tsubasa Yonai Ryo Ono Peter Reinig Maximilian Lederer Konrad Seidel Ruben Alcala Thomas Mikolajick Uwe Schroeder Taku Umebayashi Kentaro Akiyama HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. 1-2 2024 VLSI Technology and Circuits https://doi.org/10.1109/VLSITechnologyandCir46783.2024.10631328 conf/vlsit/2024 db/conf/vlsit/vlsit2024.html#ShutoOYORLSAMSU24 Kenta Suzuki Keizo Hiraga Kazuhiro Bessho Kimiyoshi Usami Taku Umebayashi A 40 nm 2 kb MTJ-Based Non-Volatile SRAM Macro with Novel Data-Aware Store Architecture for Normally Off Computing. 1-2 2023 VLSI Technology and Circuits https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185432 conf/vlsit/2023 db/conf/vlsit/vlsit2023.html#SuzukiHBUU23 Jun Okuno Takafumi Kunihiro Kenta Konishi Hideki Maemura Yusuke Shuto Fumitaka Sugaya Monica Materano Tarek Ali Maximilian Lederer Kati Kühnel Konrad Seidel Uwe Schroeder Thomas Mikolajick Masanori Tsukamoto Taku Umebayashi High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. 1-3 2021 IMW https://doi.org/10.1109/IMW51353.2021.9439595 conf/imw2/2021 db/conf/imw2/imw2021.html#OkunoKKMSSMALKS21 Daisuke Saito Toshiyuki Kobayashi Hiroki Koga Nicolo Ronchi Kaustuv Banerjee Yusuke Shuto Jun Okuno Kenta Konishi Luca Di Piazza Arindam Mallik Jan Van Houdt Masanori Tsukamoto Kazunobu Ohkuri Taku Umebayashi Takayuki Ezaki Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. 1-2 2021 VLSI Circuits https://doi.org/10.23919/VLSICircuits52068.2021.9492479 conf/vlsic/2021 db/conf/vlsic/vlsic2021.html#SaitoKKRBSOKPMH21 Tsutomu Haruta Tsutomu Nakajima Jun Hashizume Taku Umebayashi Hiroshi Takahashi Kazuo Taniguchi Masami Kuroda Hiroshi Sumihiro Koji Enoki Takatsugu Yamasaki Katsuya Ikezawa Atsushi Kitahara Masao Zen Masafumi Oyama Hiroki Koga Hidenobu Tsugawa Tomoharu Ogita Takashi Nagano Satoshi Takano Tetsuo Nomoto 4.6 A 1/2.3inch 20Mpixel 3-layer stacked CMOS Image Sensor with DRAM. 76-77 2017 ISSCC https://doi.org/10.1109/ISSCC.2017.7870268 conf/isscc/2017 db/conf/isscc/isscc2017.html#HarutaNHUTTKSEY17 Shunichi Sukegawa Taku Umebayashi Tsutomu Nakajima Hiroshi Kawanobe Ken Koseki Isao Hirota Tsutomu Haruta Masanori Kasai Koji Fukumoto Toshifumi Wakano Keishi Inoue Hiroshi Takahashi Takashi Nagano Yoshikazu Nitta Teruo Hirayama Noriyuki Fukushima A 1/4-inch 8Mpixel back-illuminated stacked CMOS image sensor. 484-485 2013 ISSCC https://doi.org/10.1109/ISSCC.2013.6487825 conf/isscc/2013 db/conf/isscc/isscc2013.html#SukegawaUNKKHHKFWITNNHF13 Kentaro Akiyama Ruben Alcala Tarek Ali Kaustuv Banerjee Kazuhiro Bessho Koji Enoki Takayuki Ezaki Koji Fukumoto Noriyuki Fukushima Tsutomu Haruta Jun Hashizume Keizo Hiraga Teruo Hirayama Isao Hirota Jan Van Houdt Katsuya Ikezawa Keishi Inoue Masanori Kasai Hiroshi Kawanobe Atsushi Kitahara Toshiyuki Kobayashi Hiroki Koga Kenta Konishi Ken Koseki Kati Kühnel Takafumi Kunihiro Masami Kuroda Maximilian Lederer Hideki Maemura Arindam Mallik Monica Materano Thomas Mikolajick Takashi Nagano Tsutomu Nakajima Yoshikazu Nitta Tetsuo Nomoto Tomoharu Ogita Kazunobu Ohkuri Jun Okuno Ryo Ono Masafumi Oyama Luca Di Piazza Peter Reinig Nicolo Ronchi Daisuke Saito Uwe Schroeder Konrad Seidel Yusuke Shuto Fumitaka Sugaya Shunichi Sukegawa Hiroshi Sumihiro Kenta Suzuki Hiroshi Takahashi Satoshi Takano Kazuo Taniguchi Hidenobu Tsugawa Masanori Tsukamoto Kimiyoshi Usami Toshifumi Wakano Takatsugu Yamasaki Tsubasa Yonai Masao Zen